technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com 1500 watt unidirectional transient voltage suppessor qualified per mil-prf-19500/500 t4-lds-0096 rev. 2 (101572) page 1 of 6 devices levels * 1n5629 thru 1n5665 jan 1n5629a thru 1n5665a jantx jantxv * commercial only description do-13 (do-202aa) this popular transient voltage suppressor (tvs) series for 1n5629 thru 1n5665a are jedec registered selections for unidirectional devices. all have the same high peak pulse power rating of 1500 w with extremely fast r esponse times. they are also available in military qualified selections as described in th e features section herein. they are most often used for protecting against transients from inductive switching environments, induced rf effects, or induced secondary lightning e ffects as found in lower surge levels of iec61000-4-5. they are also very successful in protecting airborne avionics and electrical systems. since their response time is virtua lly instantaneous, they can also protect from esd and eft per iec61000- 4-2 and iec61000-4-4. important: for the most current data, consult microsemis website: http://www.microsemi.com features ? unidirectional tvs series for thru-hole mounting ? suppresses transients up to 1500 watts @ 10/1000 s (see figure 1) ? clamps transient in less than 100 pico seconds ? working voltage (v wm ) range 5 v to 171 v ? hermetic sealed do-13 metal package ? jan/tx/txv military qualifications also available for the tighter tolerance a suffix devices per mil-prf-19500/500 by adding the jan, jantx, or jantxv prefix, e.g. jantxv1n5629a, etc. ? for bidirectional tvs in the same do-13 package, see separate data sheet for the 1n6036 C 1n6072a series (also military qualified) ? surface mount equivalent packages also available as smcj5.0 - smcj170ca or smcg5.0 C smcg170ca in separate data sheet (consult factory for other surface mount options) ? plastic axial-leaded equivalents availa ble in the 1n6267 C 1n6303a series in separate data sheet downloaded from: http:///
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0096 rev. 2 (101572) page 2 of 6 applications / benefits ? protection from switching transients and induced rf ? esd & eft protection per iec 61000-4-2 and -4-4 ? secondary lightning protection per iec61000-4-5 with 42 ohms source impedance: class 1: 1n5629 to 1n5665a class 2: 1n5629 to 1n5663a class 3: 1n5629 to 1n5655a class 4: 1n5629 to 1n5648a ? secondary lightning protection per iec61000-4-5 with 12 ohms source impedance: class 1: 1n5629 to 1n5658a class 2: 1n5629 to 1n5651a class 3: 1n5629 to 1n5643a class 4: 1n5629 to 1n5636a ? secondary lightning protection per iec61000-4-5 with 2 ohms source impedance: class 2: 1n5629 to 1n5642a class 3: 1n5629 to 1n5635a ? inherently radiation hard per microsemi micronote 050 maximum ratings ? 1500 watts for 10/1000 s with repetition rate of 0.01% or less* at lead temperature (t l ) 25 o c (see figs 1, 2, & 4) ? operating & storage temperatures: -65 o to +175 o c ? thermal resistance: 50 o c/w junction to lead at 0.375 inches (10 mm) from body or 110 o c/w junction to ambient when mounted on fr4 pc board with 4 mm 2 copper pads (1oz) and track width 1 mm, length 25 mm ? dc power dissipation*: 1 watt at t l +125 o c 3/8 (10 mm) from body (see derating in fig 3 and note below) ? forward surge current: 200 amps for 8.3ms half-sine wave at t a = +25 o c ? solder temperatures: 260 o c for 10 s (maximum) mechanical and packaging ? case: do-13 (do-202aa), welded, hermetically sealed metal and glass ? finish: all external metal surfaces are tin-lead pl ated and solderable per mil-std-750 method 2026 ? polarity: cathode connected to case and polarity indicated by diode symbol ? marking: part number and polarity diode symbol ? weight: 1.4 grams. (approx) ? tape & reel option: standard per eia-296 (add tr suffix to part number) ? see package dimension on last page * tvs devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage (v wm ) except for transients that briefly dr ive the device into avalanche breakdown (v br to v c region). downloaded from: http:///
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0096 rev. 2 (101572) page 3 of 6 electrical characteristics @ t a = 25 o c jedec type no.* breakdown voltage v (br) @ i (br) min. max. breakdown current i (br) rated standoff voltage v wm maximum standby current i d @ v wm maximum clamping voltage v c @ i pp maximum peak pulse current i pp maximum temperature coefficient of v (br) v(br) v v ma v a v a %/ o c 1n5629 1n5629a 1n5630 1n5630a 6.12 6.45 6.75 7.13 7.48 7.14 8.25 7.88 10 10 10 10 5.50 5.80 6.05 6.40 1000 1000 500 500 10.8 10.5 11.7 11.3 139 143 128 132 .057 .057 .061 .061 1n5631 1n5631a 1n5632 1n5632a 7.38 7.79 8.19 8.65 9.02 8.61 10.0 9.55 10 10 1 1 6.63 7.02 7.37 7.78 200 200 50 50 12.5 12.1 13.8 13.4 120 124 109 112 .065 .065 .068 .068 1n5633 1n5633a 1n5634 1n5634a 9.00 9.5 9.9 10.5 11.0 10.5 12.1 11.6 1 1 1 1 8.10 8.55 8.92 9.40 10 10 5 5 15.0 14.5 16.2 15.6 100 103 93 96 .073 .073 .075 .075 1n5635 1n5635a 1n5636 1n5636a 10.8 11.4 11.7 12.4 13.2 12.6 14.3 13.7 1 1 1 1 9.72 10.2 10.5 11.1 5 5 5 5 17.3 16.7 19.0 18.2 87 90 79 82 .078 .078 .081 .081 1n5637 1n5637a 1n5638 1n5638a 13.5 14.3 14.4 15.2 16.5 15.8 17.6 16.8 1 1 1 1 12.1 12.8 12.9 13.6 5 5 5 5 22.0 21.2 23.5 22.5 68 71 64 67 .084 .084 .086 .086 1n5639 1n5639a 1n5640 1n5640a 16.2 17.1 18.0 19.0 19.8 18.9 22.0 21.0 1 1 1 1 14.5 15.3 16.2 17.1 5 5 5 5 26.5 25.2 29.1 27.7 56.5 59.5 51.5 54 .088 .088 .090 .090 1n5641 1n5641a 1n5642 1n5642a 19.8 20.9 21.6 22.8 24.2 23.1 26.4 25.2 1 1 1 1 17.8 18.8 19.4 20.5 5 5 5 5 31.9 30.6 34.7 33.2 47 49 43 45 .092 .092 .094 .094 1n5643 1n5643a 1n5644 1n5644a 24.3 25.7 27.0 28.5 29.7 28.4 33.0 31.5 1 1 1 1 21.8 23.1 24.3 25.6 5 5 5 5 39.1 37.5 43.5 41.4 38.5 40 34.5 36 .096 .096 .097 .097 1n5645 1n5645a 1n5646 1n5646a 29.7 31.4 32.4 34.2 36.3 34.7 39.6 37.8 1 1 1 1 26.8 28.2 29.1 30.8 5 5 5 5 47.7 45.7 52.0 49.9 31.5 33 29 30 .098 .098 .099 .099 1n5647 1n5647a 1n5648 1n5648a 35.1 37.1 38.7 40.9 42.9 41.0 47.3 45.2 1 1 1 1 31.6 33.3 34.8 36.8 5 5 5 5 56.4 53.9 61.9 59.3 26.5 28 24 25.3 .100 .100 .101 .101 1n5649 1n5649a 1n5650 1n5650a 42.3 44.7 45.9 48.5 51.7 49.4 56.1 53.6 1 1 1 1 38.1 40.2 41.3 43.6 5 5 5 5 67.8 64.8 73.5 70.1 22.2 23.2 20.4 21.4 .101 .101 .102 .102 1n5651 1n5651a 1n5652 1n5652a 50.4 53.2 55.8 58.9 61.6 58.8 68.2 65.1 1 1 1 1 45.4 47.8 50.2 53.0 5 5 5 5 80.5 77.0 89.0 85.0 18.6 19.5 16.9 17.7 .103 .103 .104 .104 1n5653 1n5653a 1n5654 1n5654a 61.2 64.6 67.5 71.3 74.8 71.4 82.5 78.8 1 1 1 1 55.1 58.1 60.7 64.1 5 5 5 5 98.0 92.0 108 103 15.3 16.3 13.9 14.6 .104 .104 .105 .105 1n5655 1n5655a 1n5656 1n5656a 73.8 77.9 81.9 86.5 90.2 86.1 100.0 95.5 1 1 1 1 66.4 70.1 73.7 77.8 5 5 5 5 118 113 131 125 12.7 13.3 11.4 12.0 .105 .105 .106 .106 1n5657 1n5657a 1n5658 1n5658a 90 95 99 105 110 105 121 116 1 1 1 1 81.0 85.5 89.2 94.0 5 5 5 5 144 137 158 152 10.4 11.0 9.5 9.9 .106 .106 .107 .107 1n5659 1n5659a 1n5660 1n5660a 108 114 117 124 132 126 143 137 1 1 1 1 97.2 102 105 111 5 5 5 5 173 165 187 179 8.7 9.1 8.0 8.4 .107 .107 .107 .107 downloaded from: http:///
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0096 rev. 2 (101572) page 4 of 6 electrical characteristics @ t a = 25 o c jedec type no.* breakdown voltage v (br) @ i (br) min. max. breakdown current i (br) rated standoff voltage v wm maximum standby current i d @ v wm maximum clamping voltage v c @ i pp maximum peak pulse current i pp maximum temperature coefficient of v (br) v(br) v v ma v a v a %/ o c 1n5661 1n5661a 1n5662 1n5662a 135 143 144 152 165 158 176 168 1 1 1 1 121 128 130 136 5 5 5 5 215 207 230 219 7.0 7.2 6.5 6.8 .108 .108 .108 .108 1n5663 1n5663a 1n5664 1n5664a 153 162 162 171 187 179 198 189 1 1 1 1 138 145 146 154 5 5 5 5 244 234 258 246 6.2 6.4 5.8 6.1 .108 .108 .108 .108 1n5665 1n5665a 180 190 220 210 1 1 162 171 5 5 287 274 5.2 5.5 .108 .108 note 1 : a tvs is normally selected according to the rated standoff voltage v wm that should be equal to or greater than the dc or continuous peak operating voltage level. note 2 : also available in military qualified t ypes with a jan, jantx, or jantxv prefix . symbols & definitions symbol definition v wm standoff voltage: applied reverse voltage to assure a nonconductive condition. (see note 1 above.) v (br) breakdown voltage: this is the breakdow n voltage the device will exhibit at 25 o c v c maximum clamping voltage: the maximum peak voltage appearing across the tvs when subjected to the peak pulse current in a one millisecond time interval. the peak pulse voltage is the combination of voltage rise due to both th e series resistance and thermal rise and positive temperature coefficient ( v(br) ) i pp peak pulse current: the peak current during the impulse (see figure 2) p pp peak pulse power: the pulse power as determined by the product of v c and i pp i d standby current: the current at the standoff voltage (v wm ) i (br) breakdown current: the current used for measuring breakdown voltage (v (br) ) downloaded from: http:///
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0096 rev. 2 (101572) page 5 of 6 graphs pulse time (tp ) time (t) in milliseconds fig. 1 C non-repetitive peak pulse power rating curve fig. 2 pulse wave form for exponential surge note: peak power defined as peak voltage times peak current fig. 3 steady-state power derating curve t a ambient temperature o c fig. 4 derating curve peak value i pp pulse current (i p ) in percent of i pp pulse time duration (tp) is defined as that point where i p decays to 50% of pea k va l ue ( i p p ). peak pulse power (p p p )inkw exponential wave-form (see fig. 2) square-wave pulse 100 10 1.0 0.1kw 100ns 1 s 10 s 100 s 1ms 10ms steady-state power dissipation (watts) t l C lead temperature peak pulse power (p pp ) or current i (surge) in percent of 25 o c rating peak value i pp downloaded from: http:///
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0096 rev. 2 (101572) page 6 of 6 package dimensions notes: 1. dimensions are in inches. 2. millimeters are given for general information only. 3. the major diameter is essentially constant along its length. 4. within this zone, diameter ma y vary to allow for lead finishes and irregularities. 5. dimension to allow for pinc h or seal deformation anywhere along tubulation. 6. lead 1 (cathode) shall be electrically connected to the case. 7. in accordance with asme y14.5m, diameters are equivalent to x symbology. figure 1. physical dimensions (do-13) . dimensions symbol inches millimeters notes min max min max bd .215 .235 5.46 5.97 bl .293 .357 7.44 9.07 3 blt .570 14.48 cd .045 .100 1.14 2.54 5 ld .025 .035 0.64 0.89 ll 1.000 1.625 25.40 41.28 4 lu .188 4.78 4 downloaded from: http:///
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